STMicroelectronics Type N-Channel, 25 A, 750 V Enhancement, 4-Pin PowerFLAT (5 x 6) HV SGT65R65AL
- RS Stock No.:
- 275-1318P
- Mfr. Part No.:
- SGT65R65AL
- Brand:
- STMicroelectronics
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 275-1318P
- Mfr. Part No.:
- SGT65R65AL
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Package Type | PowerFLAT (5 x 6) HV | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 750V | ||
Package Type PowerFLAT (5 x 6) HV | ||
Mount Type Surface | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
- COO (Country of Origin):
- CN
The STMicroelectronics e-mode powerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.
Very high switching speed
High power management capability
Extremely low capacitances
Kelvin source pad for optimum gate driving
Zero reverse recovery charge
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