STMicroelectronics STP N-Channel MOSFET, 7 A, 800 V Enhancement, 3-Pin TO-220 STP80N600K6

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Subtotal 20 units (supplied in a tube)*

Kr. 432,40

(exc. VAT)

Kr. 540,40

(inc. VAT)

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20 - 98Kr. 21,62
100 - 198Kr. 16,475
200 +Kr. 14,76

*price indicative

Packaging Options:
RS Stock No.:
275-1356P
Mfr. Part No.:
STP80N600K6
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

800V

Series

STP

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

600mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

10.7nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

30V

Maximum Power Dissipation Pd

86W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Height

4.6mm

Length

28.9mm

Width

10.4mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics high voltage N-channel power MOSFET is designed using the ultimate MDmesh K6 technology based on super junction technology. The result is the best in class on resistance per area and gate charge for applications requiring superior power density and high efficiency.

Ultra low gate charge

100 percent avalanche tested

Zener protected

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