STMicroelectronics STW Type N-Channel MOSFET, 92 A Enhancement, 4-Pin TO-247-4 STW65N023M9-4

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Subtotal (1 tube of 30 units)*

Kr.5 098 68 

(exc. VAT)

Kr.6 373 35 

(inc. VAT)

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  • 270 unit(s) ready to ship
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Units
Per unit
Per Tube*
30 - 90Kr. 169,956Kr. 5 098,68
120 +Kr. 165,712Kr. 4 971,36

*price indicative

RS Stock No.:
275-1381
Mfr. Part No.:
STW65N023M9-4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

92A

Package Type

TO-247-4

Series

STW

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

23mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.6V

Maximum Power Dissipation Pd

463W

Typical Gate Charge Qg @ Vgs

230nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Width

15.8 mm

Height

5mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics N-channel power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on resistance and reduced gate charge values, among all silicon based fast switching super junction power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.

Excellent switching performance

Easy to drive

100 percent avalanche tested

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