STMicroelectronics STW Type N-Channel MOSFET, 55 A, 30 V Enhancement, 4-Pin TO-247

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Subtotal (1 tray of 30 units)*

Kr.3 440 91 

(exc. VAT)

Kr.4 301 13 

(inc. VAT)

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  • 30 unit(s) shipping from 25. mars 2026
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Units
Per unit
Per Tray*
30 +Kr. 114,697Kr. 3 440,91

*price indicative

RS Stock No.:
240-0611
Mfr. Part No.:
STW75N65DM6-4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

30V

Package Type

TO-247

Series

STW

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

480W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

118nC

Maximum Operating Temperature

150°C

Width

15.8 mm

Length

40.92mm

Standards/Approvals

UL

Height

5.1mm

Automotive Standard

AEC-Q101

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

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