STMicroelectronics STW Type N-Channel MOSFET, 55 A, 30 V Enhancement, 4-Pin TO-247

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Subtotal (1 tube of 30 units)*

Kr.1 543 83 

(exc. VAT)

Kr.1 929 78 

(inc. VAT)

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Units
Per unit
Per Tube*
30 +Kr. 51,461Kr. 1 543,83

*price indicative

RS Stock No.:
240-0613
Mfr. Part No.:
STWA32N65DM6AG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

30V

Series

STW

Package Type

TO-247

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Typical Gate Charge Qg @ Vgs

52.6nC

Maximum Gate Source Voltage Vgs

25 V

Maximum Power Dissipation Pd

320W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

5.1mm

Width

15.8 mm

Standards/Approvals

UL

Length

40.92mm

Automotive Standard

AEC-Q101

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

AEC-Q101 qualified

Fast-recovery body diode

Lower RDS(on) x area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

Extremely dv/dt ruggedness

Zener-protected

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