STMicroelectronics STW Type N-Channel MOSFET, 55 A, 30 V Enhancement, 4-Pin TO-247

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Subtotal (1 tray of 30 units)*

Kr.2 889 48 

(exc. VAT)

Kr.3 611 85 

(inc. VAT)

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Per Tray*
30 +Kr. 96,316Kr. 2 889,48

*price indicative

RS Stock No.:
240-0615
Mfr. Part No.:
STWA75N65DM6
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

30V

Package Type

TO-247

Series

STW

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

45mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Typical Gate Charge Qg @ Vgs

118nC

Maximum Power Dissipation Pd

480W

Maximum Gate Source Voltage Vgs

25 V

Maximum Operating Temperature

150°C

Standards/Approvals

UL

Automotive Standard

AEC-Q101

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series, Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Lower RDS(on) per area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

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