STMicroelectronics STW N-Channel MOSFET, 56 A Enhancement, 3-Pin TO-247 STWA60N043DM9

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Subtotal 10 units (supplied in a tube)*

Kr. 831,70

(exc. VAT)

Kr. 1 039,60

(inc. VAT)

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  • 236 unit(s) ready to ship
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Units
Per unit
10 - 119Kr. 83,17
120 - 509Kr. 73,90
510 - 1019Kr. 71,96
1020 +Kr. 71,16

*price indicative

Packaging Options:
RS Stock No.:
275-1384P
Mfr. Part No.:
STWA60N043DM9
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

56A

Series

STW

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

43mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.6V

Maximum Gate Source Voltage Vgs

30V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

78.6nC

Maximum Power Dissipation Pd

312W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics N-channel power MOSFET is based on the most innovative super junction MDmesh DM9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast recovery diode. The silicon based DM9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure.

Fast recovery body diode

Worldwide best RDS per area among silicon based fast recovery devices

Low gate charge, input capacitance and resistance

100 percent avalanche tested

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