Vishay SIHH Type N-Channel MOSFET, 19 A, 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH150N60E-T1-GE3

Bulk discount available

Subtotal (1 unit)*

Kr.65 21 

(exc. VAT)

Kr.81 51 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 3 000 unit(s) shipping from 09. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 49Kr. 65,21
50 - 99Kr. 63,95
100 - 249Kr. 62,58
250 - 999Kr. 61,20
1000 +Kr. 60,17

*price indicative

Packaging Options:
RS Stock No.:
279-9914
Mfr. Part No.:
SIHH150N60E-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

19A

Maximum Drain Source Voltage Vds

600V

Package Type

PowerPAK 8 x 8

Series

SIHH

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.158Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

156W

Typical Gate Charge Qg @ Vgs

36nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

8mm

Automotive Standard

No

The Vishay MOSFET is a E series power MOSFET and the transistor in it is made up of material known as silicon.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance

Avalanche energy rated

Reduced switching and conduction losses

Related links