Vishay SIHH Type N-Channel MOSFET, 18 A, 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH155N60EF-T1GE3

Subtotal (1 reel of 3000 units)*

Kr. 87 807,00

(exc. VAT)

Kr. 109 758,00

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible
Units
Per unit
Per Reel*
3000 +Kr. 29,269Kr. 87 807,00

*price indicative

RS Stock No.:
279-9915
Mfr. Part No.:
SIHH155N60EF-T1GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

600V

Package Type

PowerPAK 8 x 8

Series

SIHH

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.159Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±30 V

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

38nC

Maximum Power Dissipation Pd

156W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

8mm

Automotive Standard

No

The Vishay MOSFET is a E series power MOSFET with Fast body diode and the transistor in it is made up of material known as silicon.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance

Avalanche energy rated

Reduced switching and conduction losses

Related links