Vishay SIJ Type P-Channel MOSFET, 44.4 A, 80 V Enhancement, 7-Pin SO-8L SIJ4819DP-T1-GE3

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Subtotal (1 reel of 3000 units)*

Kr.33 468 00 

(exc. VAT)

Kr.41 835 00 

(inc. VAT)

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Per Reel*
3000 +Kr. 11,156Kr. 33 468,00

*price indicative

RS Stock No.:
279-9935
Mfr. Part No.:
SIJ4819DP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

44.4A

Maximum Drain Source Voltage Vds

80V

Package Type

SO-8L

Series

SIJ

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

0.0207Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

65nC

Maximum Power Dissipation Pd

73.5W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

5.13mm

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

Less voltage drop

Reduces conduction loss

Fully lead (Pb)-free device

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