Vishay SIJ Type P-Channel MOSFET, 44.4 A, 80 V Enhancement, 7-Pin SO-8L SIJ4819DP-T1-GE3
- RS Stock No.:
- 279-9936
- Mfr. Part No.:
- SIJ4819DP-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 4 units)*
Kr.126 18
(exc. VAT)
Kr.157 724
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 6 000 unit(s) shipping from 05. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 56 | Kr. 31,545 | Kr. 126,18 |
| 60 - 96 | Kr. 28,628 | Kr. 114,51 |
| 100 - 236 | Kr. 25,51 | Kr. 102,04 |
| 240 - 996 | Kr. 24,94 | Kr. 99,76 |
| 1000 + | Kr. 24,425 | Kr. 97,70 |
*price indicative
- RS Stock No.:
- 279-9936
- Mfr. Part No.:
- SIJ4819DP-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 44.4A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | SIJ | |
| Package Type | SO-8L | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.0207Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Maximum Power Dissipation Pd | 73.5W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.13mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 44.4A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series SIJ | ||
Package Type SO-8L | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.0207Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Maximum Power Dissipation Pd 73.5W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 5.13mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
Less voltage drop
Reduces conduction loss
Fully lead (Pb)-free device
Related links
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