Vishay SiR Type N-Channel MOSFET, 47.6 A, 100 V Enhancement, 8-Pin SO-8 SIR5110DP-T1-RE3

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 4 units)*

Kr.108 68 

(exc. VAT)

Kr.135 84 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 6 000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
4 - 56Kr. 27,17Kr. 108,68
60 - 96Kr. 26,598Kr. 106,39
100 - 236Kr. 23,653Kr. 94,61
240 - 996Kr. 23,165Kr. 92,66
1000 +Kr. 22,68Kr. 90,72

*price indicative

Packaging Options:
RS Stock No.:
279-9944
Mfr. Part No.:
SIR5110DP-T1-RE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

47.6A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

SiR

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0125Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

20nC

Maximum Power Dissipation Pd

59.5W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

5.15mm

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

Related links