Vishay SiR Type N-Channel MOSFET, 47.6 A, 100 V Enhancement, 8-Pin SO-8 SIR5110DP-T1-RE3

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Subtotal (1 pack of 4 units)*

Kr. 107,652

(exc. VAT)

Kr. 134,564

(inc. VAT)

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Units
Per unit
Per Pack*
4 - 56Kr. 26,913Kr. 107,65
60 - 96Kr. 26,313Kr. 105,25
100 - 236Kr. 23,395Kr. 93,58
240 - 996Kr. 22,965Kr. 91,86
1000 +Kr. 22,48Kr. 89,92

*price indicative

Packaging Options:
RS Stock No.:
279-9944
Mfr. Part No.:
SIR5110DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

47.6A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

SiR

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0125Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

59.5W

Typical Gate Charge Qg @ Vgs

20nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

5.15mm

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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