Vishay IRFZ48R Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-220AB IRFZ48RPBF
- RS Stock No.:
- 281-6036
- Mfr. Part No.:
- IRFZ48RPBF
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.181 67
(exc. VAT)
Kr.227 09
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 1 025 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 36,334 | Kr. 181,67 |
| 50 - 95 | Kr. 31,804 | Kr. 159,02 |
| 100 - 245 | Kr. 28,394 | Kr. 141,97 |
| 250 - 495 | Kr. 26,77 | Kr. 133,85 |
| 500 + | Kr. 24,962 | Kr. 124,81 |
*price indicative
- RS Stock No.:
- 281-6036
- Mfr. Part No.:
- IRFZ48RPBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | IRFZ48R | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.018Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2V | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Maximum Power Dissipation Pd | 190W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-42-108 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series IRFZ48R | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.018Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2V | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Maximum Power Dissipation Pd 190W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Distrelec Product Id 304-42-108 | ||
- COO (Country of Origin):
- CN
The Vishay power MOSFET utilizes advanced processing techniques to achieve low on-resistance per silicon area. It is an efficient and reliable device for various applications due to their fast switching speed and ruggedized design.
Advanced process technology
Ultra low on-resistance
Dynamic dV/dt rating
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