STMicroelectronics STW65N N-Channel MOSFET, 54 A, 650 V Enhancement, 3-Pin TO-247-4 STW65N045M9-4
- RS Stock No.:
- 287-7055P
- Mfr. Part No.:
- STW65N045M9-4
- Brand:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal (10 units, supplied in a tube)*
Kr. 756,20
(exc. VAT)
Kr. 945,20
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- 300 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 119 | Kr. 75,62 |
| 120 - 509 | Kr. 74,70 |
| 510 - 1019 | Kr. 73,67 |
| 1020 + | Kr. 72,87 |
*price indicative
- RS Stock No.:
- 287-7055P
- Mfr. Part No.:
- STW65N045M9-4
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 54A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247-4 | |
| Series | STW65N | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 312W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 54A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247-4 | ||
Series STW65N | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 312W | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET is based on the most innovative super junction MDmesh M9 technology. The silicon based M9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on resistance and reduced gate charge values, among all silicon based fast switching super junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Higher dv/dt capability
Excellent switching performance
Easy to drive
100 percent avalanche tested
Related links
- SICK Encoder Collets for Use with DBS36E-BBxxxx
- HellermannTyton Connectivity Duplex Fibre Optic Patch Panel
- Littelfuse Through Hole Gas Discharge Tube
- RS PRO PT100 RTD Sensor 100mm Long Probe, Class A +200°C Max
- Motorola Talkabout T82 Extreme 16 Channel Walkie Talkies
- Carling Technologies Illuminated DPDT, On-(On) Rocker Switch Panel Mount
- Herga General Purpose Momentary Foot Switch - Thermoplastic Case Material 3 A@ 250 V ac Contact Current, 250V
- RS PRO Silver Aluminium Profile Strut 8mm Groove, 1000mm Length