Infineon HEXFET Type P-Channel MOSFET, 74 A, 55 V Enhancement, 3-Pin TO-220 IRF4905PBF

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Kr.27 68 

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Kr.34 60 

(inc. VAT)

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10 - 24Kr. 26,31
25 - 49Kr. 25,28
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100 +Kr. 22,19

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Packaging Options:
RS Stock No.:
540-9799
Mfr. Part No.:
IRF4905PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

74A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

20mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

200W

Forward Voltage Vf

-1.6V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

180nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Length

10.54mm

Width

4.69 mm

Height

8.77mm

Standards/Approvals

No

Automotive Standard

No

Infineon HEXFET Series MOSFET, 74A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF4905PBF


This MOSFET provides a versatile solution for power management across various industrial applications. It is designed for high efficiency and reliability, making it essential for professionals in the electronics and electrical sectors. With robust performance characteristics, this product enhances circuit design and ensures optimal operation in challenging environments.

Features & Benefits


• High continuous drain current capability of 74A supports demanding applications

• Maximum drain-source voltage of 55V enables effective power management

• Low on-resistance of 20mΩ improves energy efficiency

• Designed as an enhancement mode MOSFET for precise control

• Utilises a TO-220AB package for easy mounting and integration

Applications


• Used in DC-DC converters for efficient power conversion

• Ideal for motor control requiring substantial current management

• Employed in power supplies for streamlined operation

• Suitable for thermal management in high-load environments

• Used in automation systems for dependable switching

How does the low on-resistance benefit circuit design?


The reduced on-resistance minimises power losses during operation, enhancing overall energy efficiency and performance, which is vital in high-current applications.

What is the significance of using a TO-220AB package?


The TO-220AB package allows for efficient heat dissipation while providing ease of installation, making it a preferred choice in industrial applications.

Can this component handle high-temperature environments?


Yes, it operates effectively at temperatures up to +175°C, suitable for rigorous applications.

What kind of applications require this MOSFET's high continuous drain current?


The high continuous drain current is suited for applications such as motor drives, power converters, and other systems that necessitate robust power handling.

How does the gate-threshold voltage impact its performance?


A gate threshold voltage ranging from 2V to 4V ensures reliable switching behaviour, contributing to precise control in various electronic circuits.

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