Infineon HEXFET Type P-Channel MOSFET, 74 A, 55 V Enhancement, 3-Pin TO-220 IRF4905PBF
- RS Stock No.:
- 540-9799P
- Mfr. Part No.:
- IRF4905PBF
- Brand:
- Infineon
Bulk discount available
Subtotal 10 units (supplied in a tube)*
Kr.263 10
(exc. VAT)
Kr.328 90
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 19 unit(s) shipping from 29. desember 2025
- Plus 1 000 unit(s) shipping from 15. januar 2026
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Units | Per unit |
|---|---|
| 10 - 24 | Kr. 26,31 |
| 25 - 49 | Kr. 25,28 |
| 50 - 99 | Kr. 23,57 |
| 100 + | Kr. 22,19 |
*price indicative
- RS Stock No.:
- 540-9799P
- Mfr. Part No.:
- IRF4905PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 74A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 200W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Forward Voltage Vf | -1.6V | |
| Maximum Operating Temperature | 175°C | |
| Height | 8.77mm | |
| Width | 4.69 mm | |
| Length | 10.54mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 74A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 200W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Forward Voltage Vf -1.6V | ||
Maximum Operating Temperature 175°C | ||
Height 8.77mm | ||
Width 4.69 mm | ||
Length 10.54mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 74A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF4905PBF
This MOSFET provides a versatile solution for power management across various industrial applications. It is designed for high efficiency and reliability, making it essential for professionals in the electronics and electrical sectors. With robust performance characteristics, this product enhances circuit design and ensures optimal operation in challenging environments.
Features & Benefits
• High continuous drain current capability of 74A supports demanding applications
• Maximum drain-source voltage of 55V enables effective power management
• Low on-resistance of 20mΩ improves energy efficiency
• Designed as an enhancement mode MOSFET for precise control
• Utilises a TO-220AB package for easy mounting and integration
Applications
• Used in DC-DC converters for efficient power conversion
• Ideal for motor control requiring substantial current management
• Employed in power supplies for streamlined operation
• Suitable for thermal management in high-load environments
• Used in automation systems for dependable switching
How does the low on-resistance benefit circuit design?
The reduced on-resistance minimises power losses during operation, enhancing overall energy efficiency and performance, which is vital in high-current applications.
What is the significance of using a TO-220AB package?
The TO-220AB package allows for efficient heat dissipation while providing ease of installation, making it a preferred choice in industrial applications.
Can this component handle high-temperature environments?
Yes, it operates effectively at temperatures up to +175°C, suitable for rigorous applications.
What kind of applications require this MOSFET's high continuous drain current?
The high continuous drain current is suited for applications such as motor drives, power converters, and other systems that necessitate robust power handling.
How does the gate-threshold voltage impact its performance?
A gate threshold voltage ranging from 2V to 4V ensures reliable switching behaviour, contributing to precise control in various electronic circuits.