Infineon LogicFET Type N-Channel MOSFET, 10 A, 100 V Enhancement, 3-Pin TO-220 IRL520NPBF

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RS Stock No.:
541-1196
Distrelec Article No.:
303-41-391
Mfr. Part No.:
IRL520NPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

100V

Series

LogicFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

16 V

Typical Gate Charge Qg @ Vgs

20nC

Maximum Power Dissipation Pd

48W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Height

8.77mm

Width

4.69 mm

Standards/Approvals

No

Length

10.54mm

Distrelec Product Id

30341391

Automotive Standard

No

Infineon LogicFET Series MOSFET, 10A Maximum Continuous Drain Current, 48W Maximum Power Dissipation - IRL520NPBF


This MOSFET is designed for various high-power applications. Its N-channel configuration and enhancement mode capability make it suitable for switching and amplification tasks in automation and electrical sectors. With a maximum continuous drain current of 10 A and a maximum drain-source voltage of 100V, it provides consistent performance in demanding environments. The TO-220AB package type facilitates effective thermal management in different mounting situations.

Features & Benefits


• High power dissipation capacity of 48W for robust performance

• Low drain-source resistance of 180mΩ enhances efficiency

• Wide operating temperature range from -55°C to +175°C ensures reliability

• Suitable for through-hole mounting, facilitating easy integration

• Enhanced gate threshold voltage between 1V and 2V optimises control

• Single transistor configuration simplifies design and assembly

Applications


• Utilised in power supply circuits for efficient voltage regulation

• Employed in motor control systems due to its high current capacity

• Applicable in industrial automation for effective switching operations

• Integrated into power management solutions for energy-efficient designs

What type of cooling method is recommended for optimal performance?


Effective heatsinking is essential to maintain operational efficiency and prevent overheating, especially under high load conditions.

Can it be directly replaced with other MOSFETs?


While direct replacements might be possible, it is crucial to consider specifications such as current and voltage ratings, as well as gate drive requirements, to ensure compatibility and functionality.

What is the recommended maximum gate-source voltage?


The maximum gate-source voltage should not exceed -16V to +16V to avoid damage to the device and ensure reliable operation.

How should I handle this MOSFET during installation?


Use electrostatic discharge (ESD) precautions and ensure secure connections to prevent failures or intermittent operation once installed in a circuit.

Is it suitable for high-frequency applications?


This MOSFET is suitable for switching applications, but care should be taken regarding gate drive speed and load conditions to avoid performance degradation at higher frequencies.

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