Infineon LogicFET Type N-Channel MOSFET, 17 A, 100 V Enhancement, 3-Pin TO-220 IRL530NPBF
- RS Stock No.:
- 541-1203
- Mfr. Part No.:
- IRL530NPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
Kr.13 96
(exc. VAT)
Kr.17 45
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- Shipping from 13. april 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | Kr. 13,96 |
| 10 - 24 | Kr. 13,27 |
| 25 - 49 | Kr. 12,47 |
| 50 - 99 | Kr. 11,90 |
| 100 + | Kr. 11,10 |
*price indicative
- RS Stock No.:
- 541-1203
- Mfr. Part No.:
- IRL530NPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | LogicFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 79W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.69 mm | |
| Length | 10.54mm | |
| Height | 8.77mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series LogicFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 79W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Width 4.69 mm | ||
Length 10.54mm | ||
Height 8.77mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon LogicFET N-Channel MOSFET 100 V, 3-Pin TO-220AB IRL530NPBF
- Infineon LogicFET N-Channel MOSFET 100 V, 3-Pin TO-220AB IRL520NPBF
- Infineon LogicFET N-Channel MOSFET 55 V, 3-Pin TO-220AB IRL2505PBF
- Infineon LogicFET N-Channel MOSFET 40 V, 3-Pin TO-220AB IRL1004PBF
- Infineon LogicFET N-Channel MOSFET 30 V, 3-Pin TO-220AB IRL3803PBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin TO-220AB IRF530NPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin DPAK AUIRLR3410TRL
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin D2PAK IRF530NSTRLPBF
