Infineon HEXFET Type P-Channel MOSFET, 23 A, 100 V Enhancement, 3-Pin TO-220 IRF9540NPBF

RS Stock No.:: 541-1225
Distrelec Article No.:: 303-41-310
Mfr. Part No.:: IRF9540NPBF
Brand:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 23 A, 100 V Enhancement, 3-Pin TO-220 IRF9540NPBF

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Kr.15 10

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Kr.18 88

(inc. VAT)

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Units	Per unit
1 - 9	Kr. 15,10
10 - 49	Kr. 13,73
50 - 99	Kr. 12,93
100 - 249	Kr. 11,90
250 +	Kr. 11,10

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RS Stock No.:: 541-1225
Distrelec Article No.:: 303-41-310
Mfr. Part No.:: IRF9540NPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	23A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	117mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.6V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	97nC
	Maximum Power Dissipation Pd	140W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Height	8.77mm
	Width	4.69 mm
	Standards/Approvals	No
	Length	10.54mm
	Automotive Standard	No
	Distrelec Product Id	30341310

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 23A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 117mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1.6V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 97nC
	Maximum Power Dissipation Pd 140W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Height 8.77mm
	Width 4.69 mm
	Standards/Approvals No
	Length 10.54mm
	Automotive Standard No
	Distrelec Product Id 30341310

Infineon HEXFET Series MOSFET, 23A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRF9540NPBF

This P-channel MOSFET is intended for high-performance applications across electronics and automation sectors. It supports a maximum continuous drain current of 23A and a drain-source voltage of 100 V, enhancing circuit efficiency. The enhancement mode configuration allows for accurate control of the output, making it suitable for various industries, including electrical and mechanical applications.

Features & Benefits

• Handles up to 23A continuous drain current for robust performance

• Maximum drain-source voltage of 100V for consistent operation

• Low maximum drain-source resistance of 117 mΩ optimises energy efficiency

• Capable of power dissipation up to 140W for intensive applications

• Typical gate charge of 97 nC at 10V supports fast switching

Applications

• Employed in power management circuits for efficient energy conversion

• Used in motor control systems for accurate speed regulation

• Integrated into power supply circuits to improve operational reliability

• Utilised in various automation systems for effective control functions

What is the temperature range for optimal performance?

The operating temperature range spans from -55°C to +175°C, allowing for effective use in diverse environmental conditions.

How does the gate threshold voltage affect operation?

The gate threshold voltage varies between 2V and 4V, ensuring reliable activation and smooth operation in response to control signals.

What type of mounting is required for installation?

This MOSFET is designed for through-hole mounting, facilitating integration into different electronic assemblies.

Can this MOSFET be used in high-frequency applications?

Yes, it is suitable for high-frequency switching applications due to its low gate charge and rapid switching capabilities.

What is the significance of the low drain-source resistance?

A low drain-source resistance of 117 mΩ enhances overall power efficiency by minimising energy losses during operation.