Infineon HEXFET Type P-Channel MOSFET, 23 A, 100 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 919-5028
- Mfr. Part No.:
- IRFP9140NPBF
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (25 units, in tubes of 25)*
Kr. 517,43
(exc. VAT)
Kr. 646,78
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Being discontinued
- Plus 250 unit(s) shipping from 28 September 2026
- Plus 825 unit(s) shipping from 05 October 2026
- Final 150 unit(s) shipping from 12 October 2026
Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 25 | Kr. 20,697 | Kr. 517,43 |
| 50 - 100 | Kr. 19,663 | Kr. 491,58 |
| 125 - 225 | Kr. 18,835 | Kr. 470,88 |
| 250 - 600 | Kr. 18,006 | Kr. 450,15 |
| 625 + | Kr. 16,766 | Kr. 419,15 |
*price indicative
- RS Stock No.:
- 919-5028
- Mfr. Part No.:
- IRFP9140NPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-247 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 117mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 97nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.3V | |
| Maximum Gate Source Voltage Vgs | -20, +20V | |
| Maximum Power Dissipation Pd | 140W | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.9mm | |
| Width | 5.3mm | |
| Standards/Approvals | No | |
| Height | 20.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-247 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 117mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 97nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.3V | ||
Maximum Gate Source Voltage Vgs -20, +20V | ||
Maximum Power Dissipation Pd 140W | ||
Maximum Operating Temperature 175°C | ||
Length 15.9mm | ||
Width 5.3mm | ||
Standards/Approvals No | ||
Height 20.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MX
Infineon HEXFET Series MOSFET, 23A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRFP9140NPBF
This high-power MOSFET is designed for efficient switching performance in various applications. It is ideal for power electronics, combining a high continuous drain current capability with low resistance, facilitating dependable and precise control in automation and electrical systems across multiple operational environments.
Features & Benefits
• P-Channel configuration allows for flexible circuit designs
• Maximum continuous drain current of 23A
• 100V drain-source voltage rating enhances safety
• Low RDS(on) of 117mΩ reduces power loss
• Suitable for enhancement mode applications ensuring stable performance
Applications
• Utilised in motor control for improved efficiency
• Ideal for energy management systems that require high reliability
• Common in power supply circuits for robust operation
• Employed in switching regulators for effective power conversion
• Suitable for industrial automation systems requiring dependable switching
What is the maximum gate threshold voltage for the device?
It has a maximum gate threshold voltage of 4V, suitable for diverse circuit designs.
How does the RDS(on) value impact performance?
The low RDS(on) value of 117mΩ minimises energy losses, enhancing efficiency and thermal management in applications.
What types of circuits can benefit from this MOSFET?
It is appropriate for both linear and switching circuits, making it versatile for varied electronic applications.
What is the typical gate charge required for operation?
The MOSFET requires a typical gate charge of 97nC at a gate-source voltage of 10V for optimal performance.
What are the implications of the maximum operating temperature?
With a maximum operating temperature of +175°C, this device is suitable for high-temperature environments, improving its reliability in challenging conditions.
Related links
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