onsemi PowerTrench Type N-Channel MOSFET, 170 mA, 100 V Enhancement, 3-Pin SOT-23 BSS123LT1G
- RS Stock No.:
- 545-0135
- Mfr. Part No.:
- BSS123LT1G
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.15 67
(exc. VAT)
Kr.19 59
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 2 800 unit(s) shipping from 19. januar 2026
- Plus 610 unit(s) shipping from 19. januar 2026
- Plus 45 020 unit(s) shipping from 26. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | Kr. 1,567 | Kr. 15,67 |
| 100 - 240 | Kr. 1,35 | Kr. 13,50 |
| 250 - 490 | Kr. 1,167 | Kr. 11,67 |
| 500 - 990 | Kr. 1,03 | Kr. 10,30 |
| 1000 + | Kr. 0,938 | Kr. 9,38 |
*price indicative
- RS Stock No.:
- 545-0135
- Mfr. Part No.:
- BSS123LT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 170mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 225mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.94mm | |
| Width | 1.3 mm | |
| Length | 2.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 170mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 225mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.94mm | ||
Width 1.3 mm | ||
Length 2.9mm | ||
Automotive Standard No | ||
RoHS Status: Exempted
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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