Vishay SUD23N06-31 Type N-Channel MOSFET, 23 A, 60 V Enhancement, 3-Pin TO-252 SUD23N06-31-GE3
- RS Stock No.:
- 636-5397
- Mfr. Part No.:
- SUD23N06-31-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr. 56,01
(exc. VAT)
Kr. 70,01
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 4 510 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 11,202 | Kr. 56,01 |
| 50 - 245 | Kr. 9,532 | Kr. 47,66 |
| 250 - 495 | Kr. 7,83 | Kr. 39,15 |
| 500 - 1245 | Kr. 7,37 | Kr. 36,85 |
| 1250 + | Kr. 6,934 | Kr. 34,67 |
*price indicative
- RS Stock No.:
- 636-5397
- Mfr. Part No.:
- SUD23N06-31-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | SUD23N06-31 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 31mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Power Dissipation Pd | 3W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Width | 6.22 mm | |
| Height | 2.38mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series SUD23N06-31 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 31mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Power Dissipation Pd 3W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Width 6.22 mm | ||
Height 2.38mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay SUD23N06-31 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- Vishay SIA Type N-Channel MOSFET 40 V Enhancement, 7-Pin SC-70 SIA4446DJ-T1-GE3
- Vishay 2N7002K Type N-Channel TrenchFET Power MOSFET 60 V Enhancement, 3-Pin SOT-23
- Vishay 2N7002K Type N-Channel TrenchFET Power MOSFET 60 V Enhancement, 3-Pin SOT-23 2N7002K-T1-GE3
- STMicroelectronics STripFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 STD15NF10T4
- onsemi NTD6415ANL Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 NTD6415ANLT4G
- STMicroelectronics STripFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- onsemi NTD6415ANL Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252