Infineon HEXFET N-Channel MOSFET Transistor, 120 A, 40 V, 3-Pin D2PAK IRF4104SPBF
- RS Stock No.:
- 651-8894
- Mfr. Part No.:
- IRF4104SPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr. 109,15
(exc. VAT)
Kr. 136,45
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | Kr. 21,83 | Kr. 109,15 |
| 25 - 95 | Kr. 11,624 | Kr. 58,12 |
| 100 - 245 | Kr. 10,294 | Kr. 51,47 |
| 250 - 495 | Kr. 9,992 | Kr. 49,96 |
| 500 + | Kr. 9,584 | Kr. 47,92 |
*price indicative
- RS Stock No.:
- 651-8894
- Mfr. Part No.:
- IRF4104SPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 120 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | D2PAK | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 140 W | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 68 nC @ 10 V | |
| Width | 9.65mm | |
| Number of Elements per Chip | 1 | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 120 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type D2PAK | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 140 W | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 68 nC @ 10 V | ||
Width 9.65mm | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
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