onsemi QFET Type P-Channel MOSFET, 1.8 A, 150 V Enhancement, 8-Pin MLP FDMC2523P

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Subtotal (1 pack of 5 units)*

Kr.74 25 

(exc. VAT)

Kr.92 80 

(inc. VAT)

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  • Plus 11 285 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Pack*
5 - 45Kr. 14,85Kr. 74,25
50 - 95Kr. 12,79Kr. 63,95
100 - 495Kr. 11,096Kr. 55,48
500 - 995Kr. 9,746Kr. 48,73
1000 +Kr. 8,878Kr. 44,39

*price indicative

Packaging Options:
RS Stock No.:
671-0387
Mfr. Part No.:
FDMC2523P
Brand:
onsemi
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Brand

onsemi

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.8A

Maximum Drain Source Voltage Vds

150V

Series

QFET

Package Type

MLP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.6Ω

Channel Mode

Enhancement

Forward Voltage Vf

-5V

Typical Gate Charge Qg @ Vgs

6.2nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

42W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

0.95mm

Width

3 mm

Length

3mm

Automotive Standard

No

QFET® P-Channel MOSFET, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.

They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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