onsemi Isolated PowerTrench 2 Type N-Channel Power MOSFET, 7 A, 30 V Enhancement, 8-Pin SOIC FDS8984
- RS Stock No.:
- 671-0753
- Mfr. Part No.:
- FDS8984
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.28 89
(exc. VAT)
Kr.36 11
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 2 430 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 5,778 | Kr. 28,89 |
| 50 - 95 | Kr. 4,98 | Kr. 24,90 |
| 100 - 495 | Kr. 4,304 | Kr. 21,52 |
| 500 - 995 | Kr. 3,784 | Kr. 18,92 |
| 1000 + | Kr. 3,45 | Kr. 17,25 |
*price indicative
- RS Stock No.:
- 671-0753
- Mfr. Part No.:
- FDS8984
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.6W | |
| Typical Gate Charge Qg @ Vgs | 9.2nC | |
| Maximum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Height | 1.5mm | |
| Length | 5mm | |
| Width | 4 mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.6W | ||
Typical Gate Charge Qg @ Vgs 9.2nC | ||
Maximum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Height 1.5mm | ||
Length 5mm | ||
Width 4 mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Automotive Dual N-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor provides solutions that solve complex challenges in the automotive market with a thorough command of quality, safety, and reliability standards.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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