onsemi QFET N-Channel MOSFET, 9 A, 200 V Enhancement, 3-Pin TO-252 FQD12N20LTM
- RS Stock No.:
- 671-0942
- Mfr. Part No.:
- FQD12N20LTM
- Brand:
- onsemi
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Kr. 79,16
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- 335 unit(s) ready to ship
- Plus 2 580 unit(s) shipping from 16 November 2026
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 5 - 45 | Kr. 15,832 | Kr. 79,16 | - |
| 50 - 95 | Kr. 13,636 | Kr. 68,18 | Kr. 109,80 |
| 100 - 495 | Kr. 11,828 | Kr. 59,14 | Kr. 400,40 |
| 500 - 995 | Kr. 10,41 | Kr. 52,05 | Kr. 2 711,00 |
| 1000 + | Kr. 9,45 | Kr. 47,25 | Kr. 6 382,00 |
*price indicative
- RS Stock No.:
- 671-0942
- Mfr. Part No.:
- FQD12N20LTM
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | QFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.1mm | |
| Height | 2.3mm | |
| Standards/Approvals | No | |
| Length | 6.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series QFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Width 6.1mm | ||
Height 2.3mm | ||
Standards/Approvals No | ||
Length 6.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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