onsemi QFET N-Channel MOSFET, 1 A, 800 V, 3-Pin DPAK FQD1N80TM

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

800 V

Package Type

DPAK (TO-252)

Series

QFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

6.1mm

Number of Elements per Chip

1

Length

6.6mm

Typical Gate Charge @ Vgs

5.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.3mm