onsemi 2N7000 Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin TO-92

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Subtotal 200 units (supplied in a bag)*

Kr.622 40 

(exc. VAT)

Kr.778 00 

(inc. VAT)

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200 - 480Kr. 3,112
500 - 980Kr. 2,689
1000 - 1980Kr. 2,368
2000 +Kr. 2,157

*price indicative

Packaging Options:
RS Stock No.:
671-4733P
Mfr. Part No.:
2N7000
Brand:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

200mA

Maximum Drain Source Voltage Vds

60V

Series

2N7000

Package Type

TO-92

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

5Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

400mW

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.88V

Typical Gate Charge Qg @ Vgs

0.8nC

Maximum Operating Temperature

150°C

Width

4.19 mm

Height

5.33mm

Standards/Approvals

No

Length

5.2mm

Distrelec Product Id

304-43-722

Automotive Standard

No

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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