STMicroelectronics SuperMESH N-Channel SuperMESH Power MOSFET, 4 A, 600 V Enhancement, 3-Pin TO-263

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Subtotal 50 units (supplied on a continuous strip)*

Kr. 789,70

(exc. VAT)

Kr. 987,10

(inc. VAT)

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  • Shipping from 12 January 2027
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Units
Per unit
50 - 245Kr. 15,794
250 - 495Kr. 11,14
500 +Kr. 8,69

*price indicative

Packaging Options:
RS Stock No.:
687-5190P
Mfr. Part No.:
STB4NK60ZT4
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Product Type

SuperMESH Power MOSFET

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

600V

Series

SuperMESH

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

2Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30V

Maximum Power Dissipation Pd

70W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

18.8nC

Forward Voltage Vf

1.6V

Maximum Operating Temperature

150°C

Length

10.4mm

Height

4.6mm

Standards/Approvals

JEDEC JESD97

Width

9.35mm

Automotive Standard

No

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics


MOSFET Transistors, STMicroelectronics


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