Infineon HEXFET N-Channel MOSFET, 200 A, 40 V Enhancement, 3-Pin TO-220 IRL1404ZPBF
- RS Stock No.:
- 688-7178
- Mfr. Part No.:
- IRL1404ZPBF
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 2 units)*
Kr. 55,37
(exc. VAT)
Kr. 69,212
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Last RS stock
- 16 left, ready to ship
- Final 12 unit(s) shipping from 14 September 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | Kr. 27,685 | Kr. 55,37 |
| 20 - 48 | Kr. 24,425 | Kr. 48,85 |
| 50 - 98 | Kr. 22,71 | Kr. 45,42 |
| 100 - 198 | Kr. 20,935 | Kr. 41,87 |
| 200 + | Kr. 19,675 | Kr. 39,35 |
*price indicative
- RS Stock No.:
- 688-7178
- Mfr. Part No.:
- IRL1404ZPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Typical Gate Charge Qg @ Vgs | 75nC | |
| Maximum Power Dissipation Pd | 230W | |
| Maximum Operating Temperature | 175°C | |
| Height | 8.77mm | |
| Standards/Approvals | No | |
| Width | 4.4mm | |
| Length | 10.66mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 16V | ||
Typical Gate Charge Qg @ Vgs 75nC | ||
Maximum Power Dissipation Pd 230W | ||
Maximum Operating Temperature 175°C | ||
Height 8.77mm | ||
Standards/Approvals No | ||
Width 4.4mm | ||
Length 10.66mm | ||
Automotive Standard No | ||
RoHS Status: Exempted
Infineon HEXFET Series MOSFET, 200A Maximum Continuous Drain Current, 230W Maximum Power Dissipation - IRL1404ZPBF
This MOSFET is engineered for high-efficiency performance across various applications, particularly within automation, electronics, and electrical engineering. It ensures dependable operation in extreme conditions, which is Crucial for Advanced electronic systems. Its robust design makes it a preferred option for engineers seeking to optimise power management solutions.
Features & Benefits
• Capable of handling continuous drain currents up to 200A
• Low drain-source on-resistance enhances efficiency
• Suitable for high switching speeds to reduce energy losses
• Operates within a wide temperature range from -55°C to +175°C
• Offers a maximum gate threshold voltage of 2.7V for compatibility
• Designed in a through-hole TO-220 package for simple mounting
Applications
• Used in power amplifiers and converters
• Employed in DC-DC switching power supplies
• Integrated within motor control circuitry
• Ideal for automotive and renewable energy
What is the maximum voltage this component can handle?
It can manage a maximum drain-source voltage of 40V.
How does the gate threshold voltage affect operation?
A gate threshold voltage of 2.7V ensures efficient activation of the device, allowing for accurate control.
Can this component be used in high-temperature environments?
Yes, it is rated for operation up to +175°C, making it suitable for intense applications.
What is the significance of low drain-source resistance?
Low resistance minimises power losses, thereby enhancing overall system efficiency, especially at high current loads.
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-247 IRFP3206PBF
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220