Infineon HEXFET Type N-Channel MOSFET, 210 A, 40 V Enhancement, 3-Pin TO-220 IRF2204PBF

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Subtotal (1 pack of 5 units)*

Kr.139 98 

(exc. VAT)

Kr.174 975 

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 20Kr. 27,996Kr. 139,98
25 - 45Kr. 26,61Kr. 133,05
50 - 120Kr. 24,894Kr. 124,47
125 - 245Kr. 23,246Kr. 116,23
250 +Kr. 21,256Kr. 106,28

*price indicative

Packaging Options:
RS Stock No.:
262-6722
Mfr. Part No.:
IRF2204PBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

210A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Standards/Approvals

No

Distrelec Product Id

304-41-665

Automotive Standard

No

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has additional features such as 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.

Ultra low on-resistance

Dynamic dv/dt rating

Repetitive avalanche allowed up to Tjmax

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