Infineon HEXFET Type N-Channel MOSFET, 210 A, 60 V Enhancement, 3-Pin TO-220

Bulk discount available

Subtotal (1 tube of 50 units)*

Kr.750 70 

(exc. VAT)

Kr.938 40 

(inc. VAT)

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  • 50 unit(s) ready to ship
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Units
Per unit
Per Tube*
50 - 50Kr. 15,014Kr. 750,70
100 - 200Kr. 13,362Kr. 668,10
250 - 450Kr. 12,641Kr. 632,05
500 - 950Kr. 12,325Kr. 616,25
1000 +Kr. 12,012Kr. 600,60

*price indicative

RS Stock No.:
124-8962
Mfr. Part No.:
IRFB3206PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

210A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

120nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

300W

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

175°C

Width

4.83 mm

Standards/Approvals

No

Height

9.02mm

Length

10.67mm

Automotive Standard

No

COO (Country of Origin):
CN

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