Infineon HEXFET Type N-Channel MOSFET, 210 A, 55 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 800 units)*

Kr.19 908 80 

(exc. VAT)

Kr.24 886 40 

(inc. VAT)

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Units
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Per Reel*
800 +Kr. 24,886Kr. 19 908,80

*price indicative

RS Stock No.:
217-2597
Mfr. Part No.:
IRF3805STRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

210A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.3mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

190nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

300W

Maximum Operating Temperature

175°C

Width

6.22 mm

Standards/Approvals

No

Length

6.5mm

Height

2.3mm

Automotive Standard

No

The Infineon HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead free

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