Infineon HEXFET Type N-Channel MOSFET, 85 A, 55 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 800 units)*

Kr.6 932 80 

(exc. VAT)

Kr.8 665 60 

(inc. VAT)

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Units
Per unit
Per Reel*
800 - 800Kr. 8,666Kr. 6 932,80
1600 +Kr. 8,233Kr. 6 586,40

*price indicative

RS Stock No.:
165-8197
Mfr. Part No.:
IRF1010NSTRLPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

85A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

11mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

120nC

Maximum Power Dissipation Pd

180W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.67mm

Height

4.83mm

Width

11.3 mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN

N-Channel Power MOSFET 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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