Infineon HEXFET Type N-Channel MOSFET, 85 A, 55 V Enhancement, 3-Pin TO-263 IRF1010NSTRLPBF

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Kr.125 49 

(exc. VAT)

Kr.156 86 

(inc. VAT)

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10 - 40Kr. 12,549Kr. 125,49
50 - 90Kr. 11,909Kr. 119,09
100 - 240Kr. 11,417Kr. 114,17
250 - 490Kr. 10,902Kr. 109,02
500 +Kr. 10,17Kr. 101,70

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Packaging Options:
RS Stock No.:
915-4929
Mfr. Part No.:
IRF1010NSTRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

85A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

11mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

120nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

180W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

11.3 mm

Standards/Approvals

No

Height

4.83mm

Length

10.67mm

Automotive Standard

AEC-Q101

Distrelec Product Id

304-44-443

N-Channel Power MOSFET 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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