Infineon HEXFET Type N-Channel MOSFET, 85 A, 60 V PQFN IRFH7545TRPBF

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Subtotal (1 pack of 5 units)*

Kr.43 83 

(exc. VAT)

Kr.54 79 

(inc. VAT)

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Units
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Per Pack*
5 - 45Kr. 8,766Kr. 43,83
50 - 120Kr. 7,688Kr. 38,44
125 - 245Kr. 7,252Kr. 36,26
250 - 495Kr. 5,674Kr. 28,37
500 +Kr. 4,37Kr. 21,85

*price indicative

Packaging Options:
RS Stock No.:
257-5818
Mfr. Part No.:
IRFH7545TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

85A

Maximum Drain Source Voltage Vds

60V

Package Type

PQFN

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

5.2mΩ

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

73nC

Maximum Power Dissipation Pd

83W

Maximum Operating Temperature

150°C

Length

5mm

Height

1.17mm

Width

6 mm

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Industry standard surface-mount power package

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100 kHz

Softer body-diode compared to previous silicon generation

Wide portfolio available

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