Infineon HEXFET Type N-Channel MOSFET, 29 A, 55 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 800 units)*

Kr.4 656 80 

(exc. VAT)

Kr.5 820 80 

(inc. VAT)

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  • 800 unit(s) shipping from 04. juni 2026
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Units
Per unit
Per Reel*
800 - 800Kr. 5,821Kr. 4 656,80
1600 - 1600Kr. 5,53Kr. 4 424,00
2400 +Kr. 5,18Kr. 4 144,00

*price indicative

RS Stock No.:
262-6782
Mfr. Part No.:
IRFZ34NSTRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.075Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Standards/Approvals

No

Automotive Standard

No

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has features such as 175°C operating temperature, fast switching speed.

Fully avalanche rated

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