Infineon HEXFET Type N-Channel MOSFET, 29 A, 55 V Enhancement, 3-Pin TO-263 IRFZ34NSTRLPBF

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 10 units)*

Kr.76 99 

(exc. VAT)

Kr.96 24 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 280 unit(s) ready to ship
  • Plus 800 unit(s) shipping from 04. juni 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 - 90Kr. 7,699Kr. 76,99
100 - 240Kr. 7,333Kr. 73,33
250 - 490Kr. 7,161Kr. 71,61
500 - 990Kr. 6,704Kr. 67,04
1000 +Kr. 6,235Kr. 62,35

*price indicative

Packaging Options:
RS Stock No.:
262-6784
Distrelec Article No.:
304-41-681
Mfr. Part No.:
IRFZ34NSTRLPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.075Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Standards/Approvals

No

Automotive Standard

No

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has features such as 175°C operating temperature, fast switching speed.

Fully avalanche rated

Related links

Recently viewed