Infineon HEXFET Type N-Channel MOSFET, 29 A, 55 V Enhancement, 3-Pin TO-263 IRFZ34NSTRLPBF

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Subtotal (1 pack of 10 units)*

Kr.92 62 

(exc. VAT)

Kr.115 78 

(inc. VAT)

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  • 1 080 unit(s) ready to ship
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Units
Per unit
Per Pack*
10 - 90Kr. 9,262Kr. 92,62
100 - 240Kr. 8,809Kr. 88,09
250 - 490Kr. 8,614Kr. 86,14
500 - 990Kr. 8,065Kr. 80,65
1000 +Kr. 7,505Kr. 75,05

*price indicative

Packaging Options:
RS Stock No.:
262-6784
Mfr. Part No.:
IRFZ34NSTRLPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.075Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Standards/Approvals

No

Distrelec Product Id

304-41-681

Automotive Standard

No

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has features such as 175°C operating temperature, fast switching speed.

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