P-Channel MOSFET, 4.4 A, 8 V, 3-Pin SOT-23 Vishay SI2305CDS-T1-GE3
- RS Stock No.:
- 710-3248P
- Mfr. Part No.:
- SI2305CDS-T1-GE3
- Brand:
- Vishay
55180 In stock for same day dispatch
Price Each (Supplied on a Reel) Quantities below 150 on continuous strip
Kr. 2,467
(exc. VAT)
Kr. 3,084
(inc. VAT)
Units | Per unit |
|---|---|
| 200 - 480 | Kr. 2,467 |
| 500 - 980 | Kr. 2,11 |
| 1000 - 1980 | Kr. 1,763 |
| 2000 + | Kr. 1,58 |
- RS Stock No.:
- 710-3248P
- Mfr. Part No.:
- SI2305CDS-T1-GE3
- Brand:
- Vishay
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 4.4 A |
| Maximum Drain Source Voltage | 8 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 35 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 960 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Transistor Material | Si |
| Width | 1.4mm |
| Length | 3.04mm |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 12 nC @ 4.5 V, 20 nC @ 8 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Height | 1.02mm |