N-Channel MOSFET, 1.9 A, 60 V, 3-Pin SOT-23 Vishay SI2308BDS-T1-GE3
- RS Stock No.:
- 710-3257P
- Mfr. Part No.:
- SI2308BDS-T1-GE3
- Brand:
- Vishay
41620 In stock for same day dispatch
Price Each (Supplied on a Reel) Quantities below 150 on continuous strip
Kr. 3,392
(exc. VAT)
Kr. 4,24
(inc. VAT)
Units | Per unit |
|---|---|
| 200 - 480 | Kr. 3,392 |
| 500 - 980 | Kr. 3,17 |
| 1000 - 1980 | Kr. 2,718 |
| 2000 + | Kr. 2,266 |
- RS Stock No.:
- 710-3257P
- Mfr. Part No.:
- SI2308BDS-T1-GE3
- Brand:
- Vishay
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 1.9 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 156 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 1.09 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Length | 3.04mm |
| Transistor Material | Si |
| Width | 1.4mm |
| Typical Gate Charge @ Vgs | 4.5 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Height | 1.02mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |