Vishay Si4134DY Type N-Channel MOSFET, 14 A, 30 V Enhancement, 8-Pin SOIC Si4134DY-T1-GE3
- RS Stock No.:
- 710-3320
- Mfr. Part No.:
- Si4134DY-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.80 08
(exc. VAT)
Kr.100 10
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Last RS stock
- Final 4 080 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | Kr. 8,008 | Kr. 80,08 |
| 100 - 240 | Kr. 7,528 | Kr. 75,28 |
| 250 - 490 | Kr. 6,807 | Kr. 68,07 |
| 500 - 990 | Kr. 6,429 | Kr. 64,29 |
| 1000 + | Kr. 5,995 | Kr. 59,95 |
*price indicative
- RS Stock No.:
- 710-3320
- Mfr. Part No.:
- Si4134DY-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | Si4134DY | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.014Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7.3nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 5W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Standards/Approvals | IEC 61249-2-21 | |
| Height | 1.5mm | |
| Width | 4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series Si4134DY | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.014Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7.3nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 5W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Standards/Approvals IEC 61249-2-21 | ||
Height 1.5mm | ||
Width 4 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay N-Channel MOSFET 30 V, 8-Pin SOIC SI4134DY-T1-GE3
- Infineon HEXFET N-Channel MOSFET 30 V, 8-Pin SOIC IRL6342PBF
- Infineon HEXFET N-Channel MOSFET 30 V, 8-Pin SOIC IRL6342TRPBF
- Vishay P-Channel MOSFET 30 V, 8-Pin PowerPAK ChipFET SI5419DU-T1-GE3
- Vishay N-Channel MOSFET 30 V, 8-Pin SOIC SI4178DY-T1-GE3
- Vishay N-Channel MOSFET 30 V, 8-Pin SOIC SI4162DY-T1-GE3
- Vishay N-Channel MOSFET 25 V, 8-Pin SOIC SI4116DY-T1-GE3
- Vishay N-Channel MOSFET 40 V, 8-Pin SOIC SI4124DY-T1-GE3