Infineon HEXFET N-Channel MOSFET, 260 A, 30 V Enhancement, 3-Pin TO-220 IRLB3813PBF
- RS Stock No.:
- 725-9313
- Mfr. Part No.:
- IRLB3813PBF
- Brand:
- Infineon
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Kr. 51,02
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In Stock
- 22 unit(s) ready to ship
- Plus 16 unit(s) shipping from 18 November 2026
- Plus 1 000 unit(s) shipping from 04 March 2027
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Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 2 - 18 | Kr. 25,51 | Kr. 51,02 | - |
| 20 - 48 | Kr. 19,505 | Kr. 39,01 | Kr. 120,10 |
| 50 - 98 | Kr. 18,305 | Kr. 36,61 | Kr. 360,25 |
| 100 - 198 | Kr. 17,215 | Kr. 34,43 | Kr. 829,50 |
| 200 + | Kr. 15,785 | Kr. 31,57 | Kr. 1 945,00 |
*price indicative
- RS Stock No.:
- 725-9313
- Mfr. Part No.:
- IRLB3813PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 260A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 57nC | |
| Maximum Power Dissipation Pd | 230W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.83mm | |
| Height | 9.02mm | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 260A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 57nC | ||
Maximum Power Dissipation Pd 230W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Width 4.83mm | ||
Height 9.02mm | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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