Infineon HEXFET Type N-Channel MOSFET, 260 A, 30 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

Kr.567 10 

(exc. VAT)

Kr.708 90 

(inc. VAT)

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  • Plus 900 unit(s) shipping from 29. desember 2025
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Units
Per unit
Per Tube*
50 - 50Kr. 11,342Kr. 567,10
100 - 200Kr. 9,527Kr. 476,35
250 - 450Kr. 8,96Kr. 448,00
500 - 950Kr. 8,392Kr. 419,60
1000 +Kr. 8,097Kr. 404,85

*price indicative

RS Stock No.:
913-4032
Mfr. Part No.:
IRLB3813PBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

260A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

57nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

230W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

10.67mm

Height

9.02mm

Width

4.83 mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
MX

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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