Taiwan Semiconductor Type P-Channel MOSFET, 3 A, 30 V Enhancement, 3-Pin SOT-23 TSM2307CX RFG
- RS Stock No.:
- 743-6030
- Distrelec Article No.:
- 304-45-913
- Mfr. Part No.:
- TSM2307CX RFG
- Brand:
- Taiwan Semiconductor
Bulk discount available
Subtotal (1 pack of 25 units)*
Kr. 95,875
(exc. VAT)
Kr. 119,85
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Supply shortage
Due to limitations in the supply chain, stock is being assigned as it becomes available.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 225 | Kr. 3,835 | Kr. 95,88 |
| 250 - 475 | Kr. 3,231 | Kr. 80,78 |
| 500 + | Kr. 3,126 | Kr. 78,15 |
*price indicative
- RS Stock No.:
- 743-6030
- Distrelec Article No.:
- 304-45-913
- Mfr. Part No.:
- TSM2307CX RFG
- Brand:
- Taiwan Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 140mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.25W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.1mm | |
| Width | 1.7 mm | |
| Standards/Approvals | No | |
| Height | 1.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 140mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.25W | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 3.1mm | ||
Width 1.7 mm | ||
Standards/Approvals No | ||
Height 1.2mm | ||
Automotive Standard No | ||
P-Channel Power MOSFET, Taiwan Semiconductor
MOSFET Transistors, Taiwan Semiconductor
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