Infineon CoolMOS C3 Type N-Channel MOSFET, 11 A, 650 V Enhancement, 3-Pin TO-220 SPA11N60C3XKSA1
- RS Stock No.:
- 752-8467
- Mfr. Part No.:
- SPA11N60C3XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
Kr.71 39
(exc. VAT)
Kr.89 238
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 32 unit(s) shipping from 09. februar 2026
- Plus 10 unit(s) shipping from 16. februar 2026
- Plus 500 unit(s) shipping from 16. juli 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | Kr. 35,695 | Kr. 71,39 |
| 20 - 48 | Kr. 31,86 | Kr. 63,72 |
| 50 - 98 | Kr. 29,63 | Kr. 59,26 |
| 100 - 198 | Kr. 27,855 | Kr. 55,71 |
| 200 + | Kr. 25,74 | Kr. 51,48 |
*price indicative
- RS Stock No.:
- 752-8467
- Mfr. Part No.:
- SPA11N60C3XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS C3 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 380mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 33W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.65mm | |
| Standards/Approvals | No | |
| Height | 9.83mm | |
| Width | 4.85 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS C3 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 380mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 33W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Length 10.65mm | ||
Standards/Approvals No | ||
Height 9.83mm | ||
Width 4.85 mm | ||
Automotive Standard No | ||
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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