Infineon SIPMOS Type N-Channel MOSFET, 350 mA, 240 V Depletion, 4-Pin SOT-223 BSP129H6327XTSA1
- RS Stock No.:
- 753-2800
- Mfr. Part No.:
- BSP129H6327XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.28 52
(exc. VAT)
Kr.35 65
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 60 unit(s) shipping from 29. desember 2025
- Plus 205 unit(s) shipping from 05. januar 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 5,704 | Kr. 28,52 |
| 50 - 120 | Kr. 5,08 | Kr. 25,40 |
| 125 - 245 | Kr. 4,714 | Kr. 23,57 |
| 250 - 495 | Kr. 4,37 | Kr. 21,85 |
| 500 + | Kr. 4,118 | Kr. 20,59 |
*price indicative
- RS Stock No.:
- 753-2800
- Mfr. Part No.:
- BSP129H6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 240V | |
| Package Type | SOT-223 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 20Ω | |
| Channel Mode | Depletion | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 1.8W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 3.8nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.5 mm | |
| Height | 1.6mm | |
| Length | 6.5mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 240V | ||
Package Type SOT-223 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 20Ω | ||
Channel Mode Depletion | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 1.8W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 3.8nC | ||
Maximum Operating Temperature 150°C | ||
Width 3.5 mm | ||
Height 1.6mm | ||
Length 6.5mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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