Infineon BSP88 N-Channel MOSFET, 350 mA, 240 V Enhancement, 4-Pin SOT-223 BSP88H6327XTSA1

RS Stock No.:: 218-2982
Mfr. Part No.:: BSP88H6327XTSA1
Brand:: Infineon

Infineon BSP88 N-Channel MOSFET, 350 mA, 240 V Enhancement, 4-Pin SOT-223 BSP88H6327XTSA1

Subtotal (1 pack of 50 units)*

Kr. 315,05

(exc. VAT)

Kr. 393,80

(inc. VAT)

FREE delivery for online orders over 750,00 kr

In Stock

Plus 850 unit(s) shipping from 28 September 2026
Plus 1 000 unit(s) shipping from 19 November 2026

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Units	Per unit	Per Pack*
50 +	Kr. 6,301	Kr. 315,05

*price indicative

RS Stock No.:: 218-2982
Mfr. Part No.:: BSP88H6327XTSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	350mA
	Maximum Drain Source Voltage Vds	240V
	Series	BSP88
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	6Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	1.8W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	4.5nC
	Maximum Operating Temperature	150°C
	Width	3.7mm
	Standards/Approvals	No
	Height	1.8mm
	Length	6.7mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 350mA
	Maximum Drain Source Voltage Vds 240V
	Series BSP88
	Package Type SOT-223
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 6Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 1.8W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 4.5nC
	Maximum Operating Temperature 150°C
	Width 3.7mm
	Standards/Approvals No
	Height 1.8mm
	Length 6.7mm
	Automotive Standard AEC-Q101

Datasheet - BSP88H6327XTSA1

Infineon BSP88 Series MOSFET, 240V Maximum Drain Source Voltage, 1.8W Maximum Power Dissipation - BSP88H6327XTSA1

This MOSFET is a high-voltage N-channel transistor designed for surface-mount power switching and control in demanding environments. It operates across a wide temperature range suitable for automotive applications and provides enhancement-mode switching with gate protection suitable for typical control voltages.

Features and Benefits:

• 240V drain-source rating enables high-voltage switching capability
• 6Ω maximum Rds reduces conduction losses in low-current circuits
• 350mA continuous drain current supports moderate current loads
• 4.5nC typical gate charge allows Faster gate transitions
• 1.8W power dissipation accommodates moderate thermal loads
• 20V gate-source limit provides defined gate protection margin

Applications

• Suitable for automotive sensor Interface circuits
• Ideal for isolated high-voltage control stages
• Used with battery-management or auxiliary systems
• Can be used for board-level power sequencing
• Suitable for low-power motor driver control

What temperature span can it tolerate during operation?

The device is rated to operate from -55°C up to 150°C.

How is the device intended to be mounted on a PCB?

It is supplied in a SOT-223 package for surface-mount assembly.

What package pin count should designers expect?

There are four pins available for circuit connections.

What channel type and mode define its switching behaviour?

It is an N-channel device operating in enhancement mode.

Which automotive standard does it meet for qualification?

It complies with the AEC-Q101 automotive component standard.