Microchip Single TN0110 1 Type N-Channel MOSFET, 350 mA, 100 V Enhancement, 3-Pin TO-92 TN0110N3-G

View all MOSFETs
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
177-9690
Mfr. Part No.:
TN0110N3-G
Brand:
Microchip
Find similar products by selecting one or more attributes.
Select all

Brand

Microchip

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

350mA

Maximum Drain Source Voltage Vds

100V

Series

TN0110

Package Type

TO-92

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

4.5Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Transistor Configuration

Single

Height

5.33mm

Length

5.08mm

Number of Elements per Chip

1

COO (Country of Origin):
TW
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Low threshold - 2.0V max.

High input impedance

Low input capacitance - 50pF typical

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

Related links