Infineon OptiMOS P Type P-Channel Power Transistor, 90 A, 30 V Enhancement, 3-Pin TO-252

Subtotal 5 units (supplied on a continuous strip)*

Kr.33 55 

(exc. VAT)

Kr.41 95 

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 1 210 unit(s), ready to ship
Units
Per unit
5 +Kr. 6,71

*price indicative

Packaging Options:
RS Stock No.:
753-3033P
Mfr. Part No.:
IPD90P03P4L04ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type P

Product Type

Power Transistor

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

30V

Series

OptiMOS P

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.1mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

125nC

Maximum Power Dissipation Pd

137W

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

6.22 mm

Height

2.3mm

Length

6.5mm

Standards/Approvals

RoHS

Automotive Standard

AEC-Q

Infineon OptiMOS™P P-Channel Power MOSFETs


The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode

Avalanche rated

Low switching and conduction power losses

Pb-free lead plating; RoHS compliant

Standard packages

OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.