Infineon OptiMOS 3 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 7-Pin TO-263 IPB025N10N3GATMA1

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Subtotal (1 unit)*

Kr.48 32 

(exc. VAT)

Kr.60 40 

(inc. VAT)

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Packaging Options:
RS Stock No.:
754-5421
Mfr. Part No.:
IPB025N10N3GATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS 3

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

4.4mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

155nC

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

10.31mm

Standards/Approvals

No

Height

4.57mm

Width

9.45 mm

Automotive Standard

No

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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